Mfr Part #:

RFD12N06RLESM9A

Name: RFD12N06RLESM9A
Brand: On Semiconductor
SKU: RFD12N06RLESM9A
Availability: InStock

Mfr Name: On Semiconductor

Description:

MOSFET N-CH 60V 18A TO252AA

✓ Total Stock: 9,627 pcs

RFD12N06RLESM9A Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	313 pcs On Request	313 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	9,314 pcs On Request	9314 pcs	On Request	1	On Request	On Request	1809+	On Request	On Request

Short technical summary and product information.

MOSFET N-CH 60V 18A TO252AA

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

HUFA76409D3S

On Semiconductor

MOSFET N-CH 60V 18A TO252AA

HUFA76409D3ST

On Semiconductor

N-CHANNEL LOGIC LEVEL ULTRAFET

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	18A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	49W (Tc)
Rds On (Max) @ Id, Vgs	63mOhm @ 18A, 10V
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	3V @ 250µA