RFD12N06RLESM9A The ON Semiconductor RFD12N06RLESM9A is an N-Channel MOSFET with a 60V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 63mOhm at 18A and 10V.
Mfr Part #:

RFD12N06RLESM9A

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor RFD12N06RLESM9A is an N-Channel MOSFET with a 60V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 63mOhm at 18A and 10V.
✓ Total Stock: 10,844 pcs
$ Price Range: $2.27

RFD12N06RLESM9A Available from 3 distributors

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✓ Non-Authorised
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9,314 pcs
9314 pcs On Request 1 On Request On Request 1809+ On Request On Request
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1,217 pcs
1217 pcs On Request 1 On Request On Request 1533+ On Request On Request
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313 pcs
313 pcs On Request 1 On Request On Request On Request On Request On Request

RFD12N06RLESM9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RFD12N06RLESM9A Description

Short technical summary and product information.

The RFD12N06RLESM9A is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for power switching applications, offering a drain-source voltage (Vdss) of 60V and a continuous drain current (Tc) of 18A.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 63mOhm when measured at 18A drain current and 10V gate-source voltage. The gate charge (Qg) is a maximum of 15nC at 10V, and the input capacitance (Ciss) is 485pF at 25V. The gate threshold voltage (Vgs(th)) is 3V at 250µA, with a maximum gate-source voltage (Vgs) of ±16V.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 49W (Tc). It utilizes MOSFET (Metal Oxide) technology.

 

The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 (TO-252AA) surface mount package, suitable for space-constrained applications.

RFD12N06RLESM9A Quick Information

Product Type: MOSFET
Canonical Name: RFD12N06RLESM9A N-Channel MOSFET
Subcategory: Single

RFD12N06RLESM9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD12N06RLESM9A Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD12N06RLESM9A Features

  • 60V drain-source voltage rating.
  • 18A continuous drain current capability.
  • Low 63mOhm maximum on-resistance.
  • TO-252AA surface mount package.
  • Wide -55°C to 175°C operating temperature.

RFD12N06RLESM9A Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in motor control applications.
  • Applicable in power management systems.

RFD12N06RLESM9A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the RFD12N06RLESM9A MOSFET?

The drain-source voltage (Vdss) is 60V.

What is the continuous drain current for the RFD12N06RLESM9A?

The continuous drain current is 18A.

What is the maximum on-resistance of the RFD12N06RLESM9A?

The maximum on-resistance (Rds On) is 63mOhm at 18A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the RFD12N06RLESM9A MOSFET supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

How is the RFD12N06RLESM9A MOSFET mounted?

It is a surface mount device.

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