RFD12N06RLE The On Semiconductor RFD12N06RLE is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and 18A continuous drain current.
Mfr Part #:

RFD12N06RLE

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor RFD12N06RLE is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and 18A continuous drain current.
✓ Total Stock: 207 pcs
$ Price Range: $2.27

RFD12N06RLE Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
207 pcs
207 pcs On Request 1 On Request On Request 0928 On Request On Request

RFD12N06RLE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RFD12N06RLE Description

Short technical summary and product information.

The RFD12N06RLE from On Semiconductor is an N-Channel Power MOSFET. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 18A at 25°C with a gate-source voltage of 10V. The on-state resistance (Rds(on)) is specified as a maximum of 63mOhm at 18A and 10V gate drive.

 

This MOSFET operates within a temperature range of -55°C to 175°C. It has a gate-to-source voltage (Vgs) tolerance of ±16V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The input capacitance (Ciss) is rated at 485pF at 25V, and the gate charge (Qg) is a maximum of 15nC at 10V.

 

The device is housed in a TO-251-3 Short Leads, IPak, TO-251AA package, suitable for through-hole mounting. The maximum power dissipation is 40W at 25°C case temperature. It is classified under the MOSFET (Metal Oxide) technology.

 

Key electrical characteristics include a drive voltage range of 4.5V to 10V for maximum and minimum Rds On. The component is RoHS3 Compliant, has an MSL rating of 1, and is REACH Unaffected.

RFD12N06RLE Quick Information

Product Type: MOSFET
Canonical Name: RFD12N06RLE N-Channel Power MOSFET
Subcategory: Single FETs, MOSFETs

RFD12N06RLE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD12N06RLE Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD12N06RLE Features

  • N-Channel MOSFET technology.
  • 60V drain-source voltage rating.
  • 18A continuous drain current.
  • Low on-resistance of 63mOhm.
  • TO-251AA through-hole package.

RFD12N06RLE Applications

  • Power switching applications.
  • General purpose power control.
  • Low voltage DC-DC converters.
  • Motor drive circuits.

RFD12N06RLE FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the RFD12N06RLE?

The drain-source voltage (Vdss) is 60V.

What is the continuous drain current of the RFD12N06RLE?

The continuous drain current is 18A at 25°C with a gate-source voltage of 10V.

What is the maximum on-resistance for the RFD12N06RLE?

The maximum on-resistance is 63mOhm at a drain current of 18A and gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the RFD12N06RLE supplied in?

It is supplied in a TO-251-3 Short Leads, IPak, TO-251AA package.

How is the RFD12N06RLE mounted?

The RFD12N06RLE is mounted using the through-hole method.

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