| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,890 pcs
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1890 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The RFD10P03LSM9A from HAR is a P-Channel Power MOSFET manufactured using the MegaFET process. This process allows for optimal silicon utilization, resulting in outstanding performance for applications such as switching regulators, converters, and motor drivers.
This MOSFET features a drain-to-source voltage rating of 30V and a continuous drain current of 10A. It has a typical on-resistance (RDS(ON)) of 0.200 Ohms at logic level conditions. The device is designed for high efficiency and can be operated directly from integrated circuits.
The RFD10P03LSM9A is available in a surface-mount DPAK package, suitable for various electronic designs. It has a maximum operating temperature of 175°C, ensuring reliability in demanding environments. Its P-Channel polarity makes it suitable for specific circuit configurations.
This component is designed for applications requiring efficient power switching. Its specifications make it a viable option for power management circuits, relay drivers, and other switching applications where a P-Channel MOSFET is required.
The drain-to-source voltage (Vds) for the RFD10P03LSM9A is 30V.
The continuous drain current (Ids) for the RFD10P03LSM9A is 10A.
The typical on-resistance (RDS(ON)) for the RFD10P03LSM9A at logic level is 0.200 Ohm.
The maximum operating temperature for the RFD10P03LSM9A is 175°C.
The RFD10P03LSM9A is available in a DPAK package.
The RFD10P03LSM9A is a surface mount device.