RFD10P03LSM9A The HAR RFD10P03LSM9A is a P-Channel Power MOSFET designed for switching applications. It offers a 30V drain-source voltage and 10A continuous drain current.
Mfr Part #:

RFD10P03LSM9A

Available from 1 distributors
Mfr Name: HAR
HAR
The HAR RFD10P03LSM9A is a P-Channel Power MOSFET designed for switching applications. It offers a 30V drain-source voltage and 10A continuous drain current.
✓ Total Stock: 1,890 pcs

RFD10P03LSM9A Available from 1 distributor

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1,890 pcs
1890 pcs On Request 1 On Request On Request N/A On Request On Request

RFD10P03LSM9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Operating Temperature

RFD10P03LSM9A Description

Short technical summary and product information.

The RFD10P03LSM9A from HAR is a P-Channel Power MOSFET manufactured using the MegaFET process. This process allows for optimal silicon utilization, resulting in outstanding performance for applications such as switching regulators, converters, and motor drivers.

 

This MOSFET features a drain-to-source voltage rating of 30V and a continuous drain current of 10A. It has a typical on-resistance (RDS(ON)) of 0.200 Ohms at logic level conditions. The device is designed for high efficiency and can be operated directly from integrated circuits.

 

The RFD10P03LSM9A is available in a surface-mount DPAK package, suitable for various electronic designs. It has a maximum operating temperature of 175°C, ensuring reliability in demanding environments. Its P-Channel polarity makes it suitable for specific circuit configurations.

 

This component is designed for applications requiring efficient power switching. Its specifications make it a viable option for power management circuits, relay drivers, and other switching applications where a P-Channel MOSFET is required.

RFD10P03LSM9A Quick Information

Product Type: MOSFET
Canonical Name: RFD10P03LSM9A P-Channel Power MOSFET
Subcategory: P-Channel

RFD10P03LSM9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Contains Lead

RFD10P03LSM9A Features

  • P-Channel Power MOSFET with 30V drain-source voltage.
  • Continuous drain current rated at 10A.
  • Low typical on-resistance of 0.200 Ohm.
  • Operates up to 175°C maximum temperature.
  • Surface mount DPAK package for easy integration.

RFD10P03LSM9A Applications

  • Suitable for switching regulator circuits.
  • Used in switching converter designs.
  • Ideal for motor driver applications.
  • Applicable for relay driver circuits.

RFD10P03LSM9A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the RFD10P03LSM9A?

The drain-to-source voltage (Vds) for the RFD10P03LSM9A is 30V.

What is the continuous drain current of the RFD10P03LSM9A?

The continuous drain current (Ids) for the RFD10P03LSM9A is 10A.

What is the typical on-resistance (RDS(ON)) for the RFD10P03LSM9A?

The typical on-resistance (RDS(ON)) for the RFD10P03LSM9A at logic level is 0.200 Ohm.

What is the maximum operating temperature for the RFD10P03LSM9A?

The maximum operating temperature for the RFD10P03LSM9A is 175°C.

What type of package is the RFD10P03LSM9A in?

The RFD10P03LSM9A is available in a DPAK package.

How is the RFD10P03LSM9A mounted?

The RFD10P03LSM9A is a surface mount device.

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