Mfr Part #:

RF4E110BNTR

The ROHM Semiconductor RF4E110BNTR is an N-Channel MOSFET designed for various applications. It features a 30V drain-to-source voltage and a continuous drain current of 11A.

✓ Total Stock: 152,240 pcs

$ Price Range: $2.27

RF4E110BNTR Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	152,240 pcs On Request	152240 pcs	On Request	1	On Request	On Request	14+	On Request	On Request

RF4E110BNTR Description

Short technical summary and product information.

The ROHM Semiconductor RF4E110BNTR is a high-performance N-Channel MOSFET. It is designed with a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current of up to 11A (Ta).

Key electrical characteristics include a maximum on-resistance (Rds On) of 11.1mOhm at 11A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 2V at 250µA. The device operates within a temperature range of -150°C (TJ) and has a maximum power dissipation of 2W (Ta).

This MOSFET utilizes Surface Mount technology and comes in an 8-PowerUDFN package, with the supplier device package specified as HUML2020L8. The drive voltage requirements are 4.5V for minimum Rds On and 10V for maximum Rds On.

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status. These specifications make the RF4E110BNTR suitable for power management and switching applications where efficiency and reliability are critical.

RF4E110BNTR Quick Information

Product Type: MOSFET

Canonical Name: ROHM Semiconductor RF4E110BNTR N-Channel MOSFET

Subcategory: Single

RF4E110BNTR Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RF4E110BNTR Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RF4E110BNTR Features

N-Channel MOSFET with 30V drain-to-source voltage.
Continuous drain current of 11A (Ta).
Low on-resistance of 11.1mOhm at 11A, 10V.
Surface mountable in 8-PowerUDFN package.
Operates up to 150°C (TJ).

RF4E110BNTR Applications

Suitable for power switching applications.
Ideal for DC-DC converters.
Used in battery management systems.
Applicable in motor control circuits.

RF4E110BNTR FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage (Vdss) for the RF4E110BNTR?

The drain-to-source voltage (Vdss) is 30 V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 11 A (Ta).

What is the maximum on-resistance (Rds On) for the RF4E110BNTR?

The maximum on-resistance is 11.1mOhm at 11A, 10V Vgs.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What type of package is the RF4E110BNTR in?

It is in an 8-PowerUDFN package.

How is the RF4E110BNTR mounted?

It is a surface mount device.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	ROHM Semiconductor
Current	11 A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	11.1mOhm @ 11A, 10V
Storage Temperature	°C ~ °C
Supplier Device Package	HUML2020L8
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA