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RF4E080BNTR The ROHM Semiconductor RF4E080BNTR is an N-Channel MOSFET designed for various applications. It offers a 30V drain-to-source voltage and 8A continuous drain current.
Mfr Part #:

RF4E080BNTR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RF4E080BNTR is an N-Channel MOSFET designed for various applications. It offers a 30V drain-to-source voltage and 8A continuous drain current.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.27

RF4E080BNTR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 1647+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RF4E080BNTR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RF4E080BNTR Description

Short technical summary and product information.

The ROHM Semiconductor RF4E080BNTR is a single N-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at ambient temperature.

 

This MOSFET features a low on-resistance (Rds On) of 17.6mOhm maximum at 8A and 10V Vgs. The gate threshold voltage (Vgs(th)) is 2V maximum at 250µA, with a maximum gate-to-source voltage (Vgs) of ±20V.

 

Designed for surface mounting, the RF4E080BNTR comes in an 8-PowerUDFN package, specified by the HUML2020L8 supplier package code. It has a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The part is suitable for applications requiring efficient switching and power management.

RF4E080BNTR Quick Information

Product Type: MOSFET
Canonical Name: RF4E080BNTR N-Channel MOSFET
Subcategory: Single N-Channel

RF4E080BNTR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RF4E080BNTR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RF4E080BNTR Features

  • 30V drain-to-source voltage rating.
  • 8A continuous drain current capability.
  • Low 17.6mOhm maximum on-resistance.
  • Surface mount 8-PowerUDFN package.
  • Operates up to 150°C junction temperature.

RF4E080BNTR Applications

  • Suitable for power switching applications.
  • Ideal for DC-DC converter circuits.
  • Used in battery management systems.
  • Applicable in load switch designs.

RF4E080BNTR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the RF4E080BNTR MOSFET?

The drain-to-source voltage (Vdss) for the RF4E080BNTR is 30V.

What is the maximum continuous drain current of the RF4E080BNTR?

The RF4E080BNTR has a maximum continuous drain current of 8A.

What is the on-resistance of the RF4E080BNTR at 8A and 10V Vgs?

The maximum on-resistance (Rds On) for the RF4E080BNTR at 8A and 10V Vgs is 17.6mOhm.

What is the operating temperature range for the RF4E080BNTR?

The RF4E080BNTR can operate at a junction temperature up to 150°C.

What type of package is the RF4E080BNTR MOSFET in?

The RF4E080BNTR is supplied in an 8-PowerUDFN package.

How is the RF4E080BNTR mounted?

The RF4E080BNTR is designed for surface mounting.

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