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RF4C100BCTCR The ROHM Semiconductor RF4C100BCTCR is a P-Channel MOSFET designed for power applications. It features a 20V drain-source voltage and a 10A continuous drain current.
Mfr Part #:

RF4C100BCTCR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RF4C100BCTCR is a P-Channel MOSFET designed for power applications. It features a 20V drain-source voltage and a 10A continuous drain current.
✓ Total Stock: 1,220 pcs
$ Price Range: $2.27

RF4C100BCTCR Available from 1 distributor

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✓ Non-Authorised
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Rayichip ✓
Non-Authorised Inventory information
1,220 pcs
On Request
1220 pcs On Request 1 On Request On Request On Request On Request On Request
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RF4C100BCTCR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RF4C100BCTCR Description

Short technical summary and product information.

The ROHM Semiconductor RF4C100BCTCR is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 10A at ambient temperature. This device is constructed using MOSFET (Metal Oxide) technology and is suitable for various power management applications.

 

It is packaged in an 8-PowerUDFN format and designed for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 23.5 nC at 4.5V and a maximum on-resistance (Rds On) of 15.6 mOhm at 10A and 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 1mA, and the maximum gate-source voltage (Vgs) is ±8V.

 

The operating temperature range for this MOSFET is up to 150°C (TJ), with a maximum power dissipation of 2W at ambient temperature. The input capacitance (Ciss) is 1660 pF at 10V. The drive voltage ranges from 1.8V to 4.5V for optimal Rds On performance.

RF4C100BCTCR Quick Information

Product Type: MOSFET
Series: RF4C100BCTCR
Canonical Name: RF4C100BCTCR P-Channel MOSFET
Subcategory: P-Channel

RF4C100BCTCR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RF4C100BCTCR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RF4C100BCTCR Features

  • P-Channel MOSFET with 20V Vdss.
  • 10A continuous drain current capability.
  • Low on-resistance of 15.6mOhm max.
  • Surface Mount 8-PowerUDFN package.
  • Operates up to 150°C.

RF4C100BCTCR Applications

  • Suitable for power switching applications.
  • Used in power management circuits.
  • Ideal for DC-DC converters.
  • Applicable in battery powered devices.

RF4C100BCTCR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RF4C100BCTCR?

The maximum drain-source voltage (Vdss) for the RF4C100BCTCR is 20V.

What is the continuous drain current of the RF4C100BCTCR?

The continuous drain current for the RF4C100BCTCR is 10A at ambient temperature.

What is the package type for the RF4C100BCTCR?

The RF4C100BCTCR is supplied in the HUML2020L8 package, which is an 8-PowerUDFN type for surface mounting.

What is the maximum operating temperature of the RF4C100BCTCR?

The RF4C100BCTCR can operate at a maximum junction temperature of 150°C.

What is the on-resistance of the RF4C100BCTCR?

The maximum on-resistance (Rds On) for the RF4C100BCTCR is 15.6mOhm when the drain current is 10A and the gate-source voltage is 4.5V.

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