| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Qorvo RF2125P is a high power, high efficiency linear amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz.
This amplifier IC features a typical output power of 1W and a P1dB of 30 dBm, with a gain of 14 dB. It operates with a supply voltage range of 3-7V and has a typical quiescent current of 360 mA. The device achieves a power added efficiency of 45% and has an input return loss of 13 dB.
The RF2125P is packaged in an 8-lead plastic SOIC-8 package with a backside ground. It is self-contained, requiring only an output matching network and power supply feed line. The device also includes a power-down mode.
It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is discontinued and marked as 'NOT FOR NEW DESIGNS'.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RF2125P amplifier operates between 1.5 GHz and 2.2 GHz.
The RF2125P provides a typical output power of 30 dBm (1W).
The RF2125P amplifier has a typical gain of 14 dB.
The RF2125P requires a supply voltage between 3V and 6V.
The RF2125P is supplied in an 8-lead SOIC-8 package.