RF1S70N06SM9A The ON Semiconductor RF1S70N06SM9A is an N-Channel Power MOSFET designed for high-performance applications. It features a 60V drain-to-source voltage and a low on-resistance.
Mfr Part #:

RF1S70N06SM9A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor RF1S70N06SM9A is an N-Channel Power MOSFET designed for high-performance applications. It features a 60V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 709 pcs
$ Price Range: $2.27

RF1S70N06SM9A Available from 1 distributor

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RF1S70N06SM9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RF1S70N06SM9A Description

Short technical summary and product information.

The RF1S70N06SM9A from ON Semiconductor is an N-Channel Power MOSFET manufactured using the MegaFET process. This device is rated for a continuous drain current of 70A at 25°C and a drain-to-source voltage of 60V. It offers a low on-resistance of 14mOhm at 70A and 10V gate-source voltage, making it suitable for efficient power switching.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 4V at 250µA. The MOSFET has a maximum power dissipation of 150W at 25°C case temperature. It operates across a wide temperature range from -55°C to 175°C.

 

This MOSFET is housed in a TO-263AB surface mount package, also known as D²Pak. The mounting type is surface mount, requiring appropriate soldering techniques for reliable assembly. The input capacitance (Ciss) is up to 3000 pF at 25V, and the gate charge (Qg) is up to 215 nC at 20V.

 

Designed for applications such as switching regulators, converters, motor drivers, and relay drivers, this N-Channel Power MOSFET can be operated directly from integrated circuits. Its robust construction and performance characteristics make it a reliable choice for demanding power electronics designs.

RF1S70N06SM9A Quick Information

Product Type: N-Channel Power MOSFET
Series: RF1S70N06
Canonical Name: RF1S70N06SM9A N-Channel Power MOSFET
Subcategory: N-Channel

RF1S70N06SM9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RF1S70N06SM9A Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RF1S70N06SM9A Features

  • 60V drain-to-source voltage rating.
  • 70A continuous drain current capability.
  • Low 14mOhm maximum on-resistance.
  • Wide -55°C to 175°C operating temperature.
  • TO-263AB surface mount package.

RF1S70N06SM9A Applications

  • Used in switching regulators.
  • Suitable for switching converters.
  • Ideal for motor drivers.
  • Applicable for relay drivers.

RF1S70N06SM9A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the RF1S70N06SM9A?

The drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current for the RF1S70N06SM9A?

The continuous drain current is 70A at 25°C.

What is the maximum on-resistance (Rds On) of the RF1S70N06SM9A?

The maximum on-resistance is 14mOhm at 70A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the RF1S70N06SM9A supplied in?

The RF1S70N06SM9A is supplied in a TO-263AB package, which is a surface mount type.

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