Mfr Part #:

RF1S640SM

Name: RF1S640SM
Brand: Harris Semiconductor
SKU: RF1S640SM

Description:

MOSFET N-CH 200V 18A TO263AB

Stock on Request

RF1S640SM Description

Short technical summary and product information.

MOSFET N-CH 200V 18A TO263AB

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Harris Semiconductor
Current	18A (Tc)
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1275 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Supplier Device Package	TO-263AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA