| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The RF1S30P06SM from Harris Semiconductor is a P-Channel Power MOSFET manufactured using the MegaFET process. This device is designed for high-performance applications such as switching regulators, converters, and motor drivers.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 30A at 25°C. The on-resistance (Rds(on)) is rated at a low 0.065 Ohms. The gate-to-source voltage (Vgs) can handle up to ±20V.
This MOSFET operates at temperatures up to 175°C. It is housed in a TO-263AB package, suitable for surface mounting. The MegaFET process ensures optimal silicon utilization for outstanding performance in demanding applications.
Applications include switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the RF1S30P06SM is 60V.
The continuous drain current is 30A at 25°C.
The on-resistance (Rds(on)) is 0.065 Ohms.
The maximum operating temperature is 175°C.
It is supplied in a TO-263AB package.
The mounting type is Surface Mount.