| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,165 pcs
|
1165 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The Intersil RF1K49093 is a Dual P-Channel LittleFET Power MOSFET manufactured using an advanced MegaFET process. This device is rated for 2.5A continuous drain current and a 12V drain-to-source voltage.
Key electrical characteristics include a low on-resistance of 0.130 Ohms, facilitating efficient power control. It achieves full rated conduction at gate bias voltages in the 3V to 5V range, enabling direct control from logic-level integrated circuits.
This MOSFET is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. It is supplied in a JEDEC MS-012AA package, designed for surface mounting.
Absolute maximum ratings include a gate-to-source voltage of ±10V and a power dissipation of 2W at 25°C. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage for the RF1K49093 is -12V.
The typical on-resistance of the RF1K49093 is 0.130 Ohms.
The continuous drain current rating for the RF1K49093 is 2.5A.
The operating temperature range for the RF1K49093 is -55°C to 150°C.
The RF1K49093 is supplied in a JEDEC MS-012AA package.