RE1C002UNTCL The ROHM Semiconductor RE1C002UNTCL is an N-Channel MOSFET with a 20V drain-source voltage and 200mA continuous drain current. It is available in a surface mount EMT3F package.
Mfr Part #:

RE1C002UNTCL

Available from 4 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RE1C002UNTCL is an N-Channel MOSFET with a 20V drain-source voltage and 200mA continuous drain current. It is available in a surface mount EMT3F package.
✓ Total Stock: 10,953 pcs
$ Price Range: $2.27

RE1C002UNTCL Available from 4 distributors

✓ Authorised
✓ Non-Authorised
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9,025 pcs
9025 pcs On Request 1 On Request On Request 1828+ On Request On Request
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1,312 pcs
1312 pcs On Request 1 On Request On Request On Request On Request On Request
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610 pcs
610 pcs On Request 1 On Request On Request On Request On Request On Request
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6 pcs
6 pcs On Request 1 On Request On Request 18+ On Request On Request

RE1C002UNTCL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RE1C002UNTCL Description

Short technical summary and product information.

The RE1C002UNTCL from ROHM Semiconductor is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 200mA at an ambient temperature of 25°C. The MOSFET has a maximum power dissipation of 150mW.

 

Key electrical characteristics include a maximum on-resistance of 1.2 Ohms at 100mA and 2.5V gate-source voltage, and a gate threshold voltage of 1V at 1mA. The input capacitance (Ciss) is a maximum of 25pF at 10V.

 

This component operates at temperatures up to 150°C (TJ). It is housed in an EMT3F (SOT-416FL) package, also referred to as SC-89 or SOT-490, and is designed for surface mounting.

 

The RE1C002UNTCL is specified with RoHS3 compliance and Moisture Sensitivity Level 1 (MSL 1).

RE1C002UNTCL Quick Information

Product Type: MOSFET
Canonical Name: RE1C002UNTCL N-Channel MOSFET
Subcategory: N-Channel

RE1C002UNTCL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RE1C002UNTCL Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RE1C002UNTCL Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 200mA.
  • Low on-resistance of 1.2 Ohms.
  • Surface mount EMT3F package.
  • RoHS3 compliant.

RE1C002UNTCL Applications

  • Used in low-voltage switching circuits
  • Suitable for surface mount applications
  • Ideal for compact electronic devices
  • Applicable in power management circuits

RE1C002UNTCL FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the RE1C002UNTCL?

The drain-source voltage (Vdss) is 20V.

What is the continuous drain current for the RE1C002UNTCL?

The continuous drain current is 200mA at an ambient temperature of 25°C.

What is the maximum power dissipation of the RE1C002UNTCL?

The maximum power dissipation is 150mW at an ambient temperature of 25°C.

What is the on-resistance of the RE1C002UNTCL?

The maximum on-resistance is 1.2 Ohms when the drain current is 100mA and the gate-source voltage is 2.5V.

What is the operating temperature range for this MOSFET?

The operating temperature range is up to 150°C (TJ).

What package type is the RE1C002UNTCL supplied in?

It is supplied in an EMT3F package, also known as SC-89 or SOT-490, and is designed for surface mounting.

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