Mfr Part #:

RE1C001UNTCL

The ROHM Semiconductor RE1C001UNTCL is an N-Channel MOSFET designed for surface mount applications. It offers a 20V drain-source voltage and 100mA current rating.

✓ Total Stock: 21,000 pcs

$ Price Range: $2.27

RE1C001UNTCL Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	21,000 pcs On Request	21000 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

RE1C001UNTCL Description

Short technical summary and product information.

The RE1C001UNTCL from ROHM Semiconductor is a single N-Channel MOSFET. This component is designed for surface mount applications, utilizing the EMT3F package.

Key electrical characteristics include a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 100mA at ambient temperature. The maximum power dissipation is rated at 150mW (Ta). It features an input capacitance (Ciss) of 7.1 pF at 10V and a maximum on-state resistance (Rds On) of 3.5 Ohms at 100mA and 4.5V gate-source voltage.

The MOSFET has a gate threshold voltage (Vgs(th)) of 1V at 100µA and a maximum gate-source voltage (Vgs) of ±8V. The operating temperature range extends up to 150°C (TJ).

This device is suitable for various electronic circuits requiring a small-signal N-channel MOSFET. Its surface mount package facilitates integration into compact designs.

RE1C001UNTCL Quick Information

Product Type: MOSFET

Canonical Name: N-Channel MOSFET

Subcategory: Single N-Channel

RE1C001UNTCL Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RE1C001UNTCL Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RE1C001UNTCL Features

20V drain-source voltage rating.
100mA continuous drain current.
150mW maximum power dissipation.
Surface mountable EMT3F package.
Operating temperature up to 150°C.

RE1C001UNTCL Applications

General purpose switching applications.
Small signal amplification circuits.
Compact electronic device designs.
Low power circuit integration.

RE1C001UNTCL FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the RE1C001UNTCL MOSFET?

The maximum drain-source voltage (Vdss) for the RE1C001UNTCL is 20V.

What is the continuous drain current of the RE1C001UNTCL?

The continuous drain current is 100mA at ambient temperature.

What is the maximum power dissipation for the RE1C001UNTCL?

The maximum power dissipation is 150mW at ambient temperature.

What package type is the RE1C001UNTCL MOSFET supplied in?

The RE1C001UNTCL is supplied in the SC-89, SOT-490, or EMT3F (SOT-416FL) package.

How is the RE1C001UNTCL MOSFET mounted?

The RE1C001UNTCL MOSFET is designed for surface mounting.

What is the operating temperature range for the RE1C001UNTCL?

The operating temperature range for the RE1C001UNTCL is up to 150°C (TJ).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	ROHM Semiconductor
Current	100mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7.1 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	150°C
Power Dissipation (Max)	150mW
Rds On (Max) @ Id, Vgs	3.5 Ohm @ 100mA, 4.5V
Storage Temperature	°C ~ °C
Supplier Device Package	EMT3F (SOT-416FL)
Supplier Package	EMT3F (SOT-416FL)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 100µA