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RDR005N25TL The ROHM Semiconductor RDR005N25TL is an N-Channel MOSFET with a 250V drain-source voltage and 500mA continuous current. It is designed for surface mount applications.
Mfr Part #:

RDR005N25TL

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RDR005N25TL is an N-Channel MOSFET with a 250V drain-source voltage and 500mA continuous current. It is designed for surface mount applications.
✓ Total Stock: 1,184 pcs
$ Price Range: $2.27

RDR005N25TL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,184 pcs
On Request
1184 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RDR005N25TL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RDR005N25TL Description

Short technical summary and product information.

The RDR005N25TL from ROHM Semiconductor is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 500mA at ambient temperature.

 

The MOSFET has a gate threshold voltage (Vgs(th)) of 3V at 1mA and a maximum gate-to-source voltage (Vgs) of ±20V. The on-state resistance (Rds On) is a maximum of 8.8 Ohms at 250mA and 10V gate drive. Input capacitance (Ciss) is 70pF at 25V, and gate charge (Qg) is 3.5nC at 10V.

 

This device is housed in a TSMT3 package, also known as SC-96, and is suitable for surface mounting. It operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 540mW at ambient temperature. The technology used is MOSFET (Metal Oxide).

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.

RDR005N25TL Quick Information

Product Type: MOSFET
Canonical Name: RDR005N25TL N-Channel MOSFET
Subcategory: N-Channel

RDR005N25TL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RDR005N25TL Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RDR005N25TL Features

  • 250V drain-source voltage rating.
  • 500mA continuous drain current.
  • Surface mount TSMT3 package.
  • 150°C maximum operating temperature.
  • MOSFET (Metal Oxide) technology.

RDR005N25TL Applications

  • Suitable for general switching circuits.
  • Power supply applications.
  • Consumer electronics.
  • Industrial control systems.

RDR005N25TL FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the RDR005N25TL?

The maximum drain-source voltage is 250V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 500mA.

What package does the RDR005N25TL come in?

It comes in a TSMT3 surface mount package with an SC-96 case.

What is the maximum gate-to-source voltage for this device?

The maximum gate-to-source voltage is ±20V.

What is the maximum power dissipation of the RDR005N25TL?

The maximum power dissipation is 540mW.

What is the operating temperature limit for this MOSFET?

The maximum operating temperature is 150°C.

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