| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The RD9-1E-B1 is a transistor JFET manufactured by Sony Corporation. It features a maximum voltage of 9.1V and a power dissipation of 0.5W. Designed for use in electronic circuits where high voltage and low noise are essential, this component is suitable for RF amplifiers, switching applications, and signal processing. The device is packaged in a DIP form factor, making it compatible with through-hole mounting on printed circuit boards. Its RoHS3 compliance ensures it meets environmental standards. The component's specifications make it suitable for use in consumer electronics, industrial equipment, and communication devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage rating is 9.1V.
The power dissipation is 0.5W.
Yes, it is RoHS3 compliant.
It uses a DIP package.