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RD3L03BATTL1 The ROHM Semiconductor RD3L03BATTL1 is a P-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a continuous current rating of 35A.
Mfr Part #:

RD3L03BATTL1

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RD3L03BATTL1 is a P-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a continuous current rating of 35A.
✓ Total Stock: 35,388 pcs
$ Price Range: $2.27

RD3L03BATTL1 Available from 2 distributors

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27,888 pcs
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7,500 pcs
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RD3L03BATTL1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RD3L03BATTL1 Description

Short technical summary and product information.

The RD3L03BATTL1 from ROHM Semiconductor is a P-Channel MOSFET belonging to the RD3 series. This device is designed for power management and switching applications, offering a drain-to-source voltage (Vdss) of 60V and a continuous current capability of 35A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 41mOhm at 35A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The input capacitance (Ciss) is 1930pF at 30V, and the gate charge (Qg) is 37nC at 10V. The maximum gate-to-source voltage is ±20V.

 

This MOSFET operates within a temperature range of 150°C (TJ) and has a maximum power dissipation of 56W (Ta). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

 

The RD3L03BATTL1 is specified with RoHS3 compliance and an MSL 1 rating, indicating unlimited moisture sensitivity. Its REACH status is unaffected.

RD3L03BATTL1 Quick Information

Product Type: MOSFET
Series: RD3L03BATTL1
Canonical Name: RD3L03BATTL1 P-Channel MOSFET
Subcategory: Single

RD3L03BATTL1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RD3L03BATTL1 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RD3L03BATTL1 Features

  • 60V drain-to-source voltage rating.
  • 35A continuous current capability.
  • Low 41mOhm Rds On resistance.
  • Surface mount TO-252 package.
  • P-Channel MOSFET technology.

RD3L03BATTL1 Applications

  • Suitable for power switching circuits.
  • Used in power management designs.
  • Ideal for battery operated devices.
  • Applicable in load switch functions.

RD3L03BATTL1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the RD3L03BATTL1?

The drain-to-source voltage (Vdss) for the RD3L03BATTL1 is 60V.

What is the maximum continuous current rating of the RD3L03BATTL1?

The RD3L03BATTL1 has a continuous current rating of 35A.

What is the Rds On resistance of the RD3L03BATTL1?

The Rds On resistance is a maximum of 41mOhm at 35A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range for the RD3L03BATTL1 is 150°C (TJ).

What type of package is the RD3L03BATTL1 in?

The RD3L03BATTL1 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the RD3L03BATTL1 RoHS compliant?

The RD3L03BATTL1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the RD3L03BATTL1?

The Moisture Sensitivity Level (MSL) for the RD3L03BATTL1 is 1 Unlimited.

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