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RD3G07BATTL1 The ROHM Semiconductor RD3G07BATTL1 is a P-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 70A.
Mfr Part #:

RD3G07BATTL1

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RD3G07BATTL1 is a P-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 70A.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.27

RD3G07BATTL1 Available from 1 distributor

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3,000 pcs
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RD3G07BATTL1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RD3G07BATTL1 Description

Short technical summary and product information.

The ROHM Semiconductor RD3G07BATTL1 is a P-Channel MOSFET belonging to the RD3 series. This device is designed for power applications and offers a drain-to-source voltage of 40V and a maximum continuous drain current of 70A at ambient temperature.

 

Key electrical characteristics include a low Rds On of 7.1mOhm at 70A and 10V Vgs, and a gate threshold voltage of 2.5V at 1mA. The input capacitance is 5550pF at 20V, and the gate charge is 105nC at 10V. The maximum gate-to-source voltage is ±20V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 101W (Ta). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for various electronic designs requiring efficient power switching.

 

The technology used is MOSFET (Metal Oxide). The RD3G07BATTL1 is specified with RoHS3 compliance and an MSL 1 rating.

RD3G07BATTL1 Quick Information

Product Type: MOSFET
Series: RD3G07BATTL1
Canonical Name: RD3G07BATTL1 P-Channel MOSFET
Subcategory: Single

RD3G07BATTL1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RD3G07BATTL1 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RD3G07BATTL1 Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • 70A continuous drain current capability.
  • Low 7.1mOhm Rds On at 70A, 10V.
  • Surface mount TO-252 package.
  • Operates up to 150°C junction temperature.

RD3G07BATTL1 Applications

  • Suitable for power switching circuits.
  • Used in high-current applications.
  • Ideal for compact designs.
  • Efficient power management solutions.

RD3G07BATTL1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the RD3G07BATTL1?

The drain-to-source voltage (Vdss) for the RD3G07BATTL1 is 40V.

What is the maximum continuous drain current of the RD3G07BATTL1?

The maximum continuous drain current (Id) for the RD3G07BATTL1 is 70A.

What is the Rds On for the RD3G07BATTL1?

The Rds On is a maximum of 7.1mOhm at 70A drain current and 10V gate-to-source voltage.

What is the operating temperature range for the RD3G07BATTL1?

The operating temperature for the RD3G07BATTL1 is up to 150°C (TJ).

What type of MOSFET is the RD3G07BATTL1?

The RD3G07BATTL1 is a P-Channel MOSFET.

What package is the RD3G07BATTL1 supplied in?

The RD3G07BATTL1 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

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