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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Mitsubishi Electric RD30HVF1 is a Silicon RF Power MOS FET specifically designed for applications in VHF RF power amplifiers. This discrete transistor is suitable for the output stage of high power amplifiers in the VHF band, commonly used in mobile radio sets.
Key electrical characteristics include a minimum output power of 30W at 175MHz and 12.5V, with a typical power gain of 14.7dB. The device boasts a typical drain efficiency of 60% at 1.0W input power and 0.5A drain current. It can withstand a load VSWR of 20:1 without destruction under specified conditions.
The RD30HVF1 operates with a drain-to-source voltage of up to 30V and a gate-to-source voltage of ±20V. The maximum channel temperature is 175°C, with a thermal resistance junction to case of 2.0°C/W. Absolute maximum ratings include a channel dissipation of 75W at 25°C and a maximum drain current of 7A.
This component comes in a TO-247 package and is designed for through-hole mounting. It is RoHS3 compliant, with an MSL of 1 Unlimited, and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RD30HVF1 has a minimum output power of 30W.
The typical drain efficiency is 60%.
The RD30HVF1 is specified for operation at 175MHz.
The maximum drain-to-source voltage is 30V.
The RD30HVF1 is supplied in a TO-247 package.
The RD30HVF1 is RoHS3 Compliant.