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RD15HVF1 The Mitsubishi Electric RD15HVF1 is an RF Power MOS FET transistor designed for high power amplifiers in the VHF/UHF bands. It offers high power and high gain.
Mfr Part #:

RD15HVF1

Available from 2 distributors
Mfr Name: Mitsubishi Electronic
Mitsubishi Electronic
The Mitsubishi Electric RD15HVF1 is an RF Power MOS FET transistor designed for high power amplifiers in the VHF/UHF bands. It offers high power and high gain.
✓ Total Stock: 354 pcs
$ Price Range: $0.99

RD15HVF1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
342 pcs
On Request
342 pcs On Request 1 On Request On Request 20+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
12 pcs
On Request
12 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RD15HVF1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
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Output Power
Storage Temperature
Tape & Reel
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RD15HVF1 Description

Short technical summary and product information.

The Mitsubishi Electric RD15HVF1 is a Silicon MOSFET Power Transistor specifically engineered for high power amplifier applications in the VHF and UHF frequency bands. This device is designed to deliver high output power and gain, making it suitable for mobile radio sets.

 

Key electrical characteristics include a drain-to-source voltage of 30V and a maximum channel dissipation of 48W. At 175MHz, it can achieve an output power of 15W with a typical drain efficiency of 60%. At 520MHz, it also provides 15W output power with a typical drain efficiency of 55%. The transistor operates with a gate threshold voltage typically around 2.0V.

 

Absolute maximum ratings specify a drain current of 4A and a channel temperature up to 150°C. Storage temperature ranges from -40°C to +150°C. The thermal resistance from junction to case is 2.6°C/W.

 

This component is designed for through-hole mounting. It is RoHS compliant, indicating adherence to environmental regulations regarding hazardous substances.

RD15HVF1 Quick Information

Product Type: RF Power MOS FET Transistor
Canonical Name: RF Power MOS FET Transistor
Subcategory: RF Power Transistor

RD15HVF1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RD15HVF1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RD15HVF1 Features

  • Designed for VHF/UHF high power amplifiers.
  • High power and high gain performance.
  • Output power exceeds 15W.
  • High efficiency on VHF and UHF bands.
  • RoHS compliant for environmental considerations.

RD15HVF1 Applications

  • Suitable for high power RF amplifiers.
  • Used in VHF/UHF mobile radio output stages.
  • Ideal for high efficiency RF switching applications.
  • Applicable in high frequency power transistors.
  • Designed for high power and gain in RF circuits.

RD15HVF1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage for the RD15HVF1?

The maximum drain to source voltage (Vdss) for the RD15HVF1 is 30V.

What is the maximum channel dissipation of the RD15HVF1?

The maximum channel dissipation (Pch) for the RD15HVF1 is 48W at 25°C case temperature.

What is the typical output power of the RD15HVF1 at 175MHz?

The typical output power (Pout1) of the RD15HVF1 at 175MHz is 15W.

What is the typical drain efficiency of the RD15HVF1 at 175MHz?

The typical drain efficiency (ηD1) of the RD15HVF1 at 175MHz is 60%.

What is the typical output power of the RD15HVF1 at 520MHz?

The typical output power (Pout2) of the RD15HVF1 at 520MHz is 15W.

What is the typical drain efficiency of the RD15HVF1 at 520MHz?

The typical drain efficiency (ηD2) of the RD15HVF1 at 520MHz is 55%.

What is the typical gate threshold voltage for the RD15HVF1?

The typical gate threshold voltage (VTH) for the RD15HVF1 is 2.0V.

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