| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,775 pcs
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12775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Mitsubishi Electric RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This component offers a minimum breakdown voltage of 30V and can handle a maximum power dissipation of 1.5W. The maximum operating temperature is rated at 110°C. It is a 3-terminal device suitable for surface mount applications.
This N-Channel, Metal-oxide Semiconductor FET is part of Mitsubishi Electric's line of RF power transistors. Its specifications make it suitable for various high-frequency amplification tasks in radio frequency circuits.
Key electrical characteristics include a minimum breakdown voltage of 30V. The device is designed to operate reliably up to a maximum temperature of 110°C, with a maximum power dissipation limit of 1.5W. The 3-terminal configuration is typical for many discrete semiconductor components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 30V.
The maximum power dissipation is 1.5W.
The maximum operating temperature is 110°C.
The RD01MUS1 has 3 terminals.
The RD01MUS1 is a MOS FET type transistor, specifically an N-Channel Metal-oxide Semiconductor FET.
The RD01MUS1 is specifically designed for VHF/UHF RF amplifiers applications.