| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,108 pcs
|
1108 pcs | On Request | 1 | On Request | On Request | 1243+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RCD051N20TL is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 200V and can handle a continuous current of 5A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 760mOhm at 2.5A and 10V Vgs, an input capacitance (Ciss) of 330pF at 25V, and a gate charge (Qg) of 8.3nC at 10V. The gate-to-source voltage (Vgs) maximum is ±30V, with a gate threshold voltage (Vgs(th)) of 5.25V at 1mA.
This MOSFET utilizes MOSFET (Metal Oxide) technology and is rated for a maximum operating temperature of 150°C (TJ). It has a power dissipation of 850mW (Ta) and 20W (Tc).
The RCD051N20TL is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, identified by the supplier package code CPT3.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The continuous current rating is 5A.
The Rds On is a maximum of 760mOhm at 2.5A and 10V Vgs.
It is an N-Channel MOSFET.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
The operating temperature is 150°C (TJ).