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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,127 pcs
|
1127 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current Rating (Nominal) | |
| Forward Voltage (Maximum @ IF=3 A) | |
| Forward Voltage (Typical @ IF=200 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Peak Forward Surge Current | |
| Reverse Leakage (Maximum @ Vr = 500 V) | |
| Reverse Leakage (Typical @ VR = 10 V) | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Voltage Rating (Maximum) |
The ROHM Semiconductor RB521S-30FJTE61 is a Schottky barrier diode suitable for low current rectification and high-speed switching applications. It is constructed using silicon epitaxial planar technology.
Key electrical characteristics include a maximum reverse voltage of 30 VDC and a mean rectifying current of 200 mA. The forward voltage is typically 0.50 V at 200 mA, and the reverse current is typically 30 µA at 10V.
This diode comes in an extremely small surface mounting type package, specifically the SOD-523 (JEDEC) or EMD2 (ROHM) package. Its construction is silicon epitaxial planar, making it suitable for space-constrained designs. The absolute maximum ratings include a junction temperature of 125°C and a storage temperature range of -40°C to +125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 30 VDC.
The typical forward voltage is 0.50 V at 200mA.
The package type is SOD-523.
The mean rectifying current is 200 mA.