| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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38 pcs
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38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RAPIDRF-26E39 is a complete RF front-end solution from NXP Semiconductors designed for 5G TDD radio systems. It operates over a frequency range of 2.496 GHz to 2.69 GHz and provides a typical output power of 38.5 dBm. The module is based on LDMOS technology and features a Doherty power amplifier architecture for high efficiency. It supports up to 200 MHz instantaneous bandwidth and can deliver up to 8 W average power with 8.5 dB PAR LTE/NR signals. The module includes an integrated switch, circulator, and pre-programmed bias controller with temperature compensation. It is housed in a compact module package measuring 57.15 mm x 38.35 mm x 10.5 mm. The RAPIDRF-26E39 is ideal for 5G massive MIMO radio units, outdoor small cells, and drivers for macro base stations. It is designed to meet regulatory emissions requirements when used with a capable digital pre-distortion system.
| Qty | Low | High |
|---|---|---|
| 1+ | $1,175.99 | $1,175.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal supply voltage is 27 V (datasheet).
2.496 GHz to 2.69 GHz.
38.5 dBm.
57.15 mm x 38.35 mm x 10.5 mm.
It is listed as RoHS3 Compliant, but this is unverified.
Up to 200 MHz.
LDMOS.