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RAL035P01TCR The ROHM Semiconductor RAL035P01TCR is a P-Channel MOSFET with a 12V drain-source voltage and 3.5A continuous current. It is supplied in a surface mount TUMT6 package.
Mfr Part #:

RAL035P01TCR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RAL035P01TCR is a P-Channel MOSFET with a 12V drain-source voltage and 3.5A continuous current. It is supplied in a surface mount TUMT6 package.
✓ Total Stock: 2,250 pcs
$ Price Range: $2.27

RAL035P01TCR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
2,250 pcs
On Request
2250 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RAL035P01TCR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RAL035P01TCR Description

Short technical summary and product information.

The ROHM Semiconductor RAL035P01TCR is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 3.5A at ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 42mOhm at 3.5A and 4.5V gate-source voltage.

 

This device operates at a maximum junction temperature of 150°C and has a power dissipation of 1W. The gate-source voltage (Vgs) maximum is -8V, with a gate threshold voltage (Vgs(th)) of 1V at 1mA. Input capacitance (Ciss) is 2700 pF at 6V, and gate charge (Qg) is 22 nC at 4.5V.

 

The RAL035P01TCR is packaged in a 6-SMD, Flat Leads (TUMT6) configuration, suitable for surface mounting. Its technology is MOSFET (Metal Oxide).

RAL035P01TCR Quick Information

Product Type: MOSFET
Series: RAL035P01TCR
Canonical Name: ROHM Semiconductor P-Channel MOSFET, 12V, 3.5A
Subcategory: Single

RAL035P01TCR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RAL035P01TCR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RAL035P01TCR Features

  • P-Channel MOSFET with 12V drain-source voltage.
  • Continuous drain current of 3.5A.
  • Low on-resistance of 42mOhm.
  • Surface mount TUMT6 package.
  • Operates up to 150°C junction temperature.

RAL035P01TCR Applications

  • Suitable for power switching applications.
  • Used in low-voltage power management.
  • Ideal for battery-powered devices.
  • Component in DC-DC converters.

RAL035P01TCR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the RAL035P01TCR?

The maximum drain-to-source voltage (Vdss) is 12V.

What is the continuous drain current of the RAL035P01TCR MOSFET?

The continuous drain current (Id) is 3.5A at ambient temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 42mOhm at 3.5A drain current and 4.5V gate-source voltage.

What is the operating temperature range for the RAL035P01TCR?

The operating temperature range is up to 150°C (TJ).

What package type is the RAL035P01TCR supplied in?

It is supplied in a 6-SMD, Flat Leads package, specifically the TUMT6.

How is the RAL035P01TCR mounted?

The RAL035P01TCR is a surface mount device.

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