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328 pcs
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328 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The RA30H3847M1-501 from Mitsubishi Electric is a 30-watt RF MOSFET Amplifier Module engineered for 12.5-volt mobile radio applications. This module covers a broadband frequency range of 378 to 470 MHz, delivering a nominal output power of 30W with a minimum efficiency of 42% under specified conditions (VDD=12.5V, VGG=5V, Pin=50mW).
Featuring enhancement-mode MOSFET transistors, the RA30H3847M1-501 allows direct battery connection to the drain. The output power and drain current are controlled by the gate voltage. It is designed for non-linear FM modulation but can be adapted for linear modulation by adjusting the quiescent drain current and controlling output power via input power.
The module has a metal shield structure for improved spurious radiation and measures 67 x 19.4 x 9.9 mm. It is supplied in an antistatic tray with 10 modules per tray.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RA30H3847M1-501 provides a minimum output power of 30W under the conditions VDD=12.5V, VGG=5V, and Pin=50mW.
This module operates within a broadband frequency range of 378 to 470 MHz.
The total efficiency is a minimum of 42% under the conditions VDD=12.5V, VGG=5V, and Pin=50mW.
The maximum drain voltage (VDD) is 17V when VGG is 5V or less, and the maximum gate voltage (VGG) is 6V when VDD is 12.5V and Pin is 50mW.
The module dimensions are 67 x 19.4 x 9.9 mm.
The RA30H3847M1-501 is supplied in an antistatic tray, with 10 modules per tray.