| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
875 pcs
|
875 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Approval Agency | |
| Frequency Range | |
| Output Power |
The RA30H3847M1 from Mitsubishi Electric is a 30-watt RF MOSFET Amplifier Module engineered for 12.5-volt mobile radio applications. It covers a broadband frequency range from 378 to 470 MHz, offering a nominal output power of 30W with a total efficiency exceeding 42% under specified conditions.
This module utilizes enhancement-mode MOSFET transistors and features a metal shield structure designed to simplify spurious radiation improvements. The compact dimensions of 67 x 19.4 x 9.9 mm make it suitable for space-constrained designs. Linear operation is achievable by setting the quiescent drain current with gate voltages and controlling output power via input power.
The RA30H3847M1 is supplied in an antistatic tray, with 10 modules per tray. It is RoHS compliant, with specific exceptions noted for lead in glass and ceramic parts.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RA30H3847M1 module operates in the broadband frequency range of 378 to 470 MHz.
The RA30H3847M1 delivers a nominal output power of 30W when operated at VDD=12.5V, VGG=5V, and Pin=50mW.
The total efficiency for the RA30H3847M1 module is greater than 42% under the specified operating conditions.
The module size for the RA30H3847M1 is 67 x 19.4 x 9.9 mm.
The RA30H3847M1 can operate within a case temperature range of -30°C to +100°C.
Yes, the RA30H3847M1 is RoHS3 compliant, with specific exceptions noted for lead in glass and ceramic parts.