SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RA30H1317M from Mitsubishi Electric is a 30-watt RF MOSFET Amplifier Module specifically engineered for 12.5-volt mobile radio applications. This module operates effectively within the 135-MHz to 175-MHz frequency spectrum.
Key specifications include a maximum operating frequency of 175 MHz and a wide operating temperature range from -30°C to 110°C. The design allows for direct battery connection to the drain of the enhancement-mode MOSFET transistors, simplifying integration.
This RF power module is suitable for various mobile communication systems requiring reliable amplification in the specified frequency bands. Its robust construction and operational parameters make it a component for demanding mobile radio environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating frequency for the RA30H1317M is 175 MHz.
The RA30H1317M operates within a temperature range of -30°C to 110°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.
