| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R8008ANJFRGTL from ROHM Semiconductor is a high-voltage N-Channel MOSFET designed for demanding applications. It features a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 8A.
This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format suitable for surface mounting. Key electrical characteristics include a gate-to-source voltage (Vgs) limit of ±30V, a gate threshold voltage (Vgs(th)) of 5V at 1mA, and a maximum on-resistance (Rds On) of 1.03 Ohm at 4A and 10V drive voltage.
With a maximum power dissipation of 195W (Tc) and an operating temperature range up to 150°C (TJ), the R8008ANJFRGTL is built for robust performance. Its input capacitance (Ciss) is 1100 pF at 25V, and gate charge (Qg) is 38 nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 800 V.
The continuous drain current (Id) is 8A.
The maximum operating junction temperature (TJ) is 150°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The mounting type is Surface Mount.
The maximum on-resistance (Rds On) is 1.03 Ohm at 4A and 10V.