R8005ANX The ROHM Semiconductor R8005ANX is an 800V, 5A N-Channel Power MOSFET in a TO-220FM package. It offers low on-resistance and fast switching speeds.
Mfr Part #:

R8005ANX

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor R8005ANX is an 800V, 5A N-Channel Power MOSFET in a TO-220FM package. It offers low on-resistance and fast switching speeds.
✓ Total Stock: 725 pcs
$ Price Range: $2.27

R8005ANX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
725 pcs
725 pcs On Request 1 On Request On Request 12+ On Request On Request

R8005ANX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

R8005ANX Description

Short technical summary and product information.

The R8005ANX from ROHM Semiconductor is an N-Channel Power MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (Vds) of 800V and a continuous drain current of 5A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 2.08 Ohms maximum at 2.5A and 10V gate-source voltage, contributing to efficient power handling. Its fast switching speed and guaranteed gate-source voltage of ±30V simplify drive circuit design. The device is housed in a TO-220FM package, suitable for through-hole mounting.

 

Key electrical characteristics include an input capacitance (Ciss) of 485pF and a gate charge (Qg) of 21nC. The operating temperature range is from -55°C to 150°C (TJ), with a maximum power dissipation of 40W at 25°C case temperature. This MOSFET is suitable for applications such as switching power supplies.

R8005ANX Quick Information

Product Type: MOSFET
Canonical Name: R8005ANX N-Channel 800V 5A Power MOSFET
Subcategory: N-Channel

R8005ANX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

R8005ANX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

R8005ANX Features

  • 800V drain-source breakdown voltage.
  • 5A continuous drain current.
  • 2.08 Ohm maximum on-resistance.
  • TO-220FM package for through-hole mounting.
  • Suitable for switching power supplies.

R8005ANX Applications

  • High-voltage switching power supplies
  • Power management circuits
  • Industrial power control
  • High-voltage motor drives

R8005ANX FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the R8005ANX?

The maximum drain-source voltage (Vds) for the R8005ANX is 800V.

What is the continuous drain current rating of the R8005ANX?

The R8005ANX has a continuous drain current rating of 5A at 25°C case temperature.

What is the maximum on-resistance (Rds(on)) for the R8005ANX?

The maximum on-resistance (Rds(on)) for the R8005ANX is 2.08 Ohms when measured at 2.5A drain current and 10V gate-source voltage.

What type of package is the R8005ANX MOSFET in?

The R8005ANX MOSFET is supplied in a TO-220FM package.

What is the operating temperature range for the R8005ANX?

The operating temperature range for the R8005ANX is -55°C to 150°C (TJ).

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