| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6030JNZC8 from ROHM Semiconductor is an N-Channel Power MOSFET suitable for various switching applications. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 30A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 143mOhm at 15A and 15V gate-source voltage, and a gate threshold voltage of 7V maximum at 5.5mA. The MOSFET also has an input capacitance of 2500pF maximum at 100V drain-source voltage and a maximum gate charge of 74nC at 15V gate-source voltage.
This component is housed in a TO-3PF package and supports through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device also boasts fast reverse recovery time, low on-resistance, and fast switching speed, making it suitable for efficient power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the R6030JNZC8 is 600V.
The continuous drain current (ID) for the R6030JNZC8 is 30A at a case temperature of 25°C.
The maximum static drain-source on-resistance (RDS(on)) for the R6030JNZC8 is 143mOhm when measured at 15A drain current and 15V gate-source voltage.
The operating junction temperature range for the R6030JNZC8 is -55°C to 150°C.
The R6030JNZC8 is supplied in a TO-3PF package.