R6024ENZ1C9 The ROHM Semiconductor R6024ENZ1C9 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a 24A current rating.
Mfr Part #:

R6024ENZ1C9

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor R6024ENZ1C9 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a 24A current rating.
✓ Total Stock: 24 pcs
$ Price Range: $2.27

R6024ENZ1C9 Available from 1 distributor

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R6024ENZ1C9 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

R6024ENZ1C9 Description

Short technical summary and product information.

The ROHM Semiconductor R6024ENZ1C9 is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage of 600V and a continuous drain current of 24A at a case temperature (Tc).

 

This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is designed for through-hole mounting in a TO-247-3 package. Key electrical characteristics include an input capacitance of 1650 pF at 25V, a gate charge of 70 nC at 10V, and a maximum on-resistance (Rds On) of 165mOhm at 11.3A and 10V.

 

The device has a maximum gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 1mA. It can dissipate up to 120W of power at the case temperature and operates within a junction temperature range of -55°C to 150°C.

 

With its robust specifications, the R6024ENZ1C9 is suitable for various power switching applications requiring high voltage and current handling capabilities.

R6024ENZ1C9 Quick Information

Product Type: MOSFET
Series: R6024ENZ1C9
Canonical Name: ROHM Semiconductor R6024ENZ1C9 N-Channel MOSFET
Subcategory: N-Channel

R6024ENZ1C9 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

R6024ENZ1C9 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

R6024ENZ1C9 Features

  • 600V drain-source voltage rating.
  • 24A continuous drain current.
  • Low Rds On of 165mOhm maximum.
  • TO-247-3 package for through-hole mounting.
  • Operates up to 150°C junction temperature.

R6024ENZ1C9 Applications

  • Suitable for high-voltage power applications.
  • Used in power supply circuits.
  • Applicable for motor control systems.
  • Ideal for switching power supplies.

R6024ENZ1C9 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the R6024ENZ1C9 MOSFET?

The maximum drain-source voltage (Vdss) for the R6024ENZ1C9 is 600V.

What is the continuous drain current rating of the R6024ENZ1C9?

The R6024ENZ1C9 has a continuous drain current rating of 24A at the case temperature (Tc).

What is the package type for the R6024ENZ1C9?

The R6024ENZ1C9 is supplied in a TO-247-3 package.

What is the maximum operating temperature for the R6024ENZ1C9?

The maximum operating junction temperature (TJ) for the R6024ENZ1C9 is 150°C.

What is the RoHS status of the R6024ENZ1C9?

The R6024ENZ1C9 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the R6024ENZ1C9?

The Moisture Sensitivity Level (MSL) for the R6024ENZ1C9 is 1 Unlimited.

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