| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,489 pcs
|
9489 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6020KNJTL from ROHM Semiconductor is a single N-Channel MOSFET. It is designed for power applications with a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at a case temperature (Tc).
This MOSFET has a low on-resistance (Rds On) of 196mOhm maximum at 9.5A and 10V Vgs, ensuring efficient power transfer. The gate charge (Qg) is 40nC maximum at 10V Vgs, and the gate threshold voltage (Vgs(th)) is 5V maximum at 1mA. It operates within a temperature range of -55°C to 150°C (TJ).
The R6020KNJTL is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. Its high power dissipation capability of 231W (Tc) makes it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous current rating is 20A.
The maximum on-resistance is 196mOhm at 9.5A and 10V Vgs.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The R6020KNJTL is a surface mount device.