| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6020JNZC17 from ROHM Semiconductor is an N-Channel MOSFET with a maximum drain-source voltage of 600V and a continuous drain current of 20A at Tc. It features a low on-resistance of 234mOhm at 10A and 15V gate drive voltage, with a gate charge of 45nC. The input capacitance is 1500pF at 100V.
This MOSFET operates at temperatures up to 150°C (TJ) and is housed in a TO-3PF package, suitable for through-hole mounting. The technology used is MOSFET (Metal Oxide). The maximum gate source voltage is ±30V, and the gate threshold voltage is 7V at 3.5mA.
Key electrical characteristics include a power dissipation of 76W (Tc). The part is identified by the DK Part Number 846-R6020JNZC17-ND. It is classified under Transistors - FETs, MOSFETs - Single category.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the R6020JNZC17 is 600V.
The R6020JNZC17 has a continuous drain current rating of 20A.
The maximum on-resistance (Rds On) for the R6020JNZC17 is 234mOhm at 10A and 15V.
The R6020JNZC17 operates at a maximum junction temperature of 150°C.
The R6020JNZC17 is supplied in a TO-3PF package.
The R6020JNZC17 is designed for through-hole mounting.