R6015ENX The ROHM Semiconductor R6015ENX is an N-Channel Power MOSFET with a 600V drain-source voltage and 15A continuous drain current. It features low on-resistance and fast switching characteristics.
Mfr Part #:

R6015ENX

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor R6015ENX is an N-Channel Power MOSFET with a 600V drain-source voltage and 15A continuous drain current. It features low on-resistance and fast switching characteristics.
✓ Total Stock: 753 pcs
$ Price Range: $2.25

R6015ENX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
753 pcs
753 pcs On Request 1 On Request On Request On Request On Request On Request

R6015ENX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

R6015ENX Description

Short technical summary and product information.

The ROHM Semiconductor R6015ENX is an N-Channel Power MOSFET designed for high-voltage applications. It offers a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 15A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-state resistance (RDS(on)) of 0.29 Ohms at 6.5A and 10V gate drive, and a gate threshold voltage (VGS(th)) between 2V and 4V at 1mA. The MOSFET exhibits fast switching speeds with a typical rise time of 55ns and fall time of 45ns.

 

This device is housed in a TO-220FM package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 60W at 25°C case temperature.

 

The R6015ENX is RoHS3 compliant and features Pb-free plating, making it suitable for various power switching applications where high voltage and efficient switching are required.

R6015ENX Quick Information

Product Type: MOSFET
Canonical Name: R6015ENX N-Channel Power MOSFET
Subcategory: N-Channel

R6015ENX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

R6015ENX Estimated Pricing

Qty Low High
1+ $2.25 $2.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

R6015ENX Features

  • 600V drain-source voltage rating.
  • 15A continuous drain current.
  • Low on-resistance of 0.29 Ohm.
  • Fast switching characteristics.
  • TO-220FM package for through-hole mounting.

R6015ENX Applications

  • Suitable for power switching circuits.
  • Ideal for high-voltage applications.
  • Used in general purpose power supplies.
  • Applicable in motor control circuits.

R6015ENX FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the R6015ENX?

The maximum drain-source voltage (VDSS) for the R6015ENX is 600V.

What is the continuous drain current rating?

The continuous drain current (ID) is rated at 15A.

What is the typical on-state resistance (RDS(on))?

The typical static drain-source on-state resistance (RDS(on)) is 0.29 Ohms at 6.5A and 10V.

What is the package type for the R6015ENX?

The R6015ENX is supplied in a TO-220FM package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

Is the R6015ENX RoHS compliant?

Yes, the R6015ENX is RoHS3 compliant.

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