| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor R6015ENJTL is a high-performance N-Channel MOSFET suitable for various power switching applications. It features a maximum drain-to-source voltage (Vds) of 600V and a continuous drain current (Ic) of 15A at a case temperature (Tc).
This MOSFET boasts a low on-resistance (Rds On) of 290mOhm at 6.5A and 10V, contributing to efficient power handling with a maximum power dissipation of 40W (Tc). The input capacitance (Ciss) is 910pF at 25V, and the gate charge (Qg) is 40nC at 10V.
Designed for surface mounting, the R6015ENJTL comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package. It operates within a temperature range of -55°C to 150°C (TJ). The gate-source voltage (Vgs) has a maximum rating of ±20V, with a threshold voltage (Vgs(th)) of 4V at 1mA.
This component utilizes MOSFET (Metal Oxide) technology and is classified as a single N-Channel MOSFET. It is suitable for applications requiring robust voltage and current handling capabilities in a compact surface mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 15A at the case temperature.
The maximum power dissipation is 40W at the case temperature.
The Rds On (Max) is 290mOhm at 6.5A and 10V.
The operating temperature range is 150°C (TJ).
The R6015ENJTL is an N-Channel MOSFET.
The R6015ENJTL is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.