| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
385 pcs
|
385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6015ANX from ROHM Semiconductor is a robust N-Channel MOSFET designed for power applications. It features a high drain-to-source voltage rating of 600V and can handle a continuous drain current of 15A under specific conditions.
Key electrical characteristics include a maximum on-resistance of 300mOhm at 7.5A and 10V, a gate charge of 50nC at 10V, and a gate threshold voltage of 4.5V at 1mA. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component is packaged in a TO-220FM configuration, suitable for through-hole mounting. Its power dissipation is rated at a maximum of 50W (Tc). The R6015ANX is a reliable choice for various power switching and control circuits where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The R6015ANX has a maximum drain-to-source voltage of 600 V.
The R6015ANX has a maximum continuous drain current of 15A (Ta).
The Rds On (Max) is 300mOhm at 7.5A and 10V.
The R6015ANX is supplied in a TO-220FM package.
The operating temperature range is up to 150°C (TJ).