| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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878 pcs
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878 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6009KNX from ROHM Semiconductor is a single N-Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 600V and can handle a continuous drain current of 9A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 535mOhm at 2.8A and 10V, a gate charge of 16.5nC at 10V, and an input capacitance of 540pF at 25V. The gate threshold voltage is 5V at 1mA, and the maximum gate-source voltage is ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 Full Pack package, also referred to as TO-220FM, and is designed for through-hole mounting.
The R6009KNX is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum continuous drain current is 9A.
It comes in a TO-220FM package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant.