| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6007KNJTL from ROHM Semiconductor is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V. It is designed for surface mounting and comes in a TO-263-3, D²Pak package.
Key electrical characteristics include a maximum continuous drain current of 7A (Tc) and an on-resistance (Rds On) of 620mOhm at 2.4A and 10V. The gate charge (Qg) is 14.5nC (Max) at 10V, and the gate threshold voltage (Vgs(th)) is 5V at 1mA. The technology used is MOSFET (Metal Oxide).
This component operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 78W (Tc). The R6007KNJTL is suitable for various power switching applications where high voltage and moderate current handling are required.
Mounting is via surface mount technology. The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, also referred to as LPTS by the supplier.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the R6007KNJTL is 600V.
The R6007KNJTL MOSFET has a continuous current rating of 7A.
The R6007KNJTL operates within a temperature range of -55°C to 150°C.
The R6007KNJTL MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The R6007KNJTL MOSFET is designed for surface mounting.