| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,913 pcs
|
1913 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6006ANDTL from ROHM Semiconductor is a high-performance N-Channel MOSFET designed for various power applications. It features a robust 600V Drain to Source Voltage (Vdss) and a continuous drain current capability of 6A (Tc).
This MOSFET utilizes Metal Oxide technology and is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge of 15 nC @ 10V and a maximum on-resistance of 1.2 Ohm @ 3A, 10V. The device operates within a temperature range of 150°C (TJ).
With its specified voltage and current ratings, the R6006ANDTL is well-suited for applications requiring efficient power switching. The surface mount package facilitates integration into compact designs, making it a versatile component for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage (Vdss) for the R6006ANDTL is 600 V.
The R6006ANDTL has a continuous drain current rating of 6 A (Tc).
The R6006ANDTL is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The R6006ANDTL is designed for surface mount.
The maximum operating temperature (TJ) for the R6006ANDTL is 150°C.