R6004ENX The ROHM Semiconductor R6004ENX is an N-Channel Power MOSFET with a 600V drain-source voltage and 4A continuous drain current. It is housed in a TO-220FM package.
Mfr Part #:

R6004ENX

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor R6004ENX is an N-Channel Power MOSFET with a 600V drain-source voltage and 4A continuous drain current. It is housed in a TO-220FM package.
✓ Total Stock: 4,000 pcs
$ Price Range: $2.27

R6004ENX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 15+ On Request On Request

R6004ENX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

R6004ENX Description

Short technical summary and product information.

The ROHM Semiconductor R6004ENX is an N-Channel Power MOSFET designed for switching applications. It features a high drain-source voltage rating of 600V and a continuous drain current of 4A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-state resistance (RDS(on)) of 0.98Ω at 1.5A and 10V gate-source voltage, and a gate threshold voltage (VGS(th)) ranging from 2V to 4V. The MOSFET offers fast switching speeds with typical rise and fall times of 22ns and 40ns, respectively.

 

With a power dissipation of 40W (Tc=25°C) and a maximum junction temperature of 150°C, the R6004ENX is suitable for various power applications. It is supplied in a TO-220FM package suitable for through-hole mounting.

 

Features such as low on-resistance, fast switching, and ease of parallel use make this MOSFET a versatile component for power supply circuits, motor control, and other switching applications.

R6004ENX Quick Information

Product Type: Power MOSFET
Canonical Name: R6004ENX N-Channel Power MOSFET
Subcategory: Transistors - FETs

R6004ENX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

R6004ENX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

R6004ENX Features

  • 600V drain-source voltage rating.
  • 4A continuous drain current capability.
  • Low on-resistance of 0.98Ω maximum.
  • Fast switching characteristics.
  • TO-220FM package for through-hole mounting.

R6004ENX Applications

  • Suitable for switching applications.
  • Used in power supply circuits.
  • Applicable for motor control.
  • Designed for general power applications.

R6004ENX FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the R6004ENX?

The maximum drain-source voltage (VDSS) for the R6004ENX is 600V.

What is the continuous drain current rating?

The continuous drain current rating is 4A at a case temperature of 25°C.

What is the maximum on-state resistance (RDS(on))?

The maximum static drain-source on-state resistance is 0.98Ω at 1.5A drain current and 10V gate-source voltage.

What is the package type for the R6004ENX?

The R6004ENX is supplied in a TO-220FM package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

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