| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,875 pcs
|
2875 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor R5016ANX is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 16A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 270mOhm at 8A and 10V, an input capacitance of 1800pF at 25V, and a gate charge of 50nC at 10V. The gate threshold voltage is 4.5V at 1mA, and the maximum gate-to-source voltage is ±30V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 50W. It is housed in a TO-220FM package and utilizes Through Hole mounting.
The R5016ANX is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The continuous drain current is 16A.
The maximum Rds On is 270mOhm at 8A drain current and 10V gate-source voltage.
The package type is TO-220FM.
The operating temperature is up to 150°C (TJ).