| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
294 pcs
|
294 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R5013ANXFU6 is an N-Channel MOSFET manufactured by Rohm Semiconductor. It is designed for power applications, featuring a high drain-to-source voltage of 500V and a continuous drain current of 13A at 25°C.
Key electrical characteristics include a maximum Rds On of 380mOhm at 6.5A and 10V gate drive voltage. The gate threshold voltage is 4.5V at 1mA, and the maximum gate-source voltage is ±30V. Input capacitance (Ciss) is rated at 1300 pF at 25V, and gate charge (Qg) is 35 nC at 10V.
This MOSFET has a maximum power dissipation of 50W (Tc) and an operating temperature range of -55°C to 150°C (TJ). It is supplied in a TO-220FM package and utilizes Through Hole mounting.
The R5013ANXFU6 is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The continuous drain current is 13A at 25°C.
It comes in a TO-220FM package.
The maximum Rds On is 380mOhm at 6.5A, 10V.
The maximum gate charge is 35 nC at 10V.
The maximum operating temperature is 150°C.