| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micro Commercial R2000F-TP is a high-voltage, fast recovery silicon rectifier diode designed for general-purpose applications. It features a maximum repetitive peak reverse voltage of 2000V and an average forward current capability of 500mA at 50°C ambient temperature.
This diode exhibits a fast switching speed with a maximum reverse recovery time of 500ns. Its electrical characteristics include a maximum forward voltage of 4.0V at 0.5A and a low reverse leakage current of 5.0µA at 25°C and rated voltage. The junction capacitance is typically 30pF measured at 1MHz and 4V.
Packaged in a DO-41 axial package, the R2000F-TP is designed for through-hole mounting. It operates within a temperature range of -55°C to +150°C, making it suitable for demanding environments. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The R2000F-TP diode has a maximum reverse voltage rating of 2000V.
The average forward current for the R2000F-TP diode is 500mA at 50°C.
The maximum reverse recovery time for the R2000F-TP diode is 500ns.
The R2000F-TP diode is supplied in a DO-41 axial package.
The operating temperature range for the R2000F-TP diode is -55°C to +150°C.
The maximum forward voltage for the R2000F-TP diode at 10mA is 1V.
The typical junction capacitance of the R2000F-TP diode is 30pF at 4V and 1MHz.