| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Renesas R1WV6416RBG-5SI#B0 is a high-performance 64Mbit Static Random Access Memory (SRAM) IC. Designed for demanding applications, it offers a fast 55ns access time and a write cycle time of 55ns, ensuring efficient data handling.
The memory operates within a voltage range of 2.7V to 3.6V and is suitable for environments with operating temperatures from -40°C to 85°C (TA). Its parallel interface and organization of 8M x 8 or 4M x 16 bits provide flexibility for various system designs.
Packaged in a compact 48-TFBGA (8.5x11mm) format, this component is designed for surface mounting, making it ideal for space-constrained printed circuit boards. The SRAM technology ensures data retention as long as power is supplied.
This part is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. It is a reliable choice for applications requiring fast, volatile memory storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
64 Mbit (8 MB).
55 ns.
2.7V to 3.6V.
-40°C to +85°C.
48-TFBGA (8.5x11mm).
8M x 8 or 4M x 16.
Volatile (SRAM).