| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Renesas R1QAA4436RBG-18IB0 is a high-performance Static Random-Access Memory (SRAM) device with a capacity of 144 Megabits. It utilizes the QDR II+ architecture, known for its efficiency in high-speed applications.
This SRAM features a 4-word burst architecture, enabling faster data retrieval through sequential access. The read latency is specified at 2.5 cycles, contributing to its overall speed. The device is compliant with RoHS3 standards, indicating adherence to environmental regulations regarding hazardous substances.
Designed for demanding applications, the R1QAA4436RBG-18IB0 offers reliable data storage and retrieval. Its specifications make it suitable for various electronic systems where fast and efficient memory access is critical. Further details regarding operating voltage, temperature range, and package type would typically be found in the product's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The R1QAA4436RBG-18IB0 has a capacity of 144 Megabits.
It uses the QDR II+ architecture.
The read latency is 2.5 cycles.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is unaffected.