| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,782 pcs
|
2782 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The Renesas R1LV1616HBG-4SI#B0 is a 16 Mbit (1M x 16) asynchronous SRAM memory device. It features a parallel interface and operates with an access time of 45 ns.
The device operates over a supply voltage range of 2.7V to 3.6V and is specified for an industrial temperature range of -40°C to 85°C. The write cycle time is also 45 ns.
The memory is housed in a 48-TFBGA (8x9.5 mm) surface mount package. It is suitable for applications requiring fast, volatile memory with a simple asynchronous interface.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
-40°C to 85°C.
48-TFBGA (8x9.5 mm).
16 Mbit.
45 ns.
1M x 16.
Parallel.