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QS8M51TR The ROHM Semiconductor QS8M51TR is a dual N/P-channel MOSFET with a 100V drain-to-source voltage rating. It is designed for surface mounting in the TSMT8 package.
Mfr Part #:

QS8M51TR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor QS8M51TR is a dual N/P-channel MOSFET with a 100V drain-to-source voltage rating. It is designed for surface mounting in the TSMT8 package.
✓ Total Stock: 15,116 pcs
$ Price Range: $1.96

QS8M51TR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
15,116 pcs
On Request
15116 pcs On Request 1 On Request On Request 1223+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

QS8M51TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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QS8M51TR Description

Short technical summary and product information.

The ROHM Semiconductor QS8M51TR is a dual N-channel and P-channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 100V and supports currents of 2A for the N-channel and 1.5A for the P-channel.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 325mOhm at 2A and 10V, and a gate charge (Qg) of 4.7nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA, indicating it can operate with logic-level gate drive.

 

This MOSFET is housed in a TSMT8 package, suitable for surface mounting. It operates within a temperature range of -150°C (TJ) and has a power dissipation rating of 1.5W. The device is RoHS3 compliant.

QS8M51TR Quick Information

Product Type: MOSFET
Canonical Name: QS8M51TR Dual N/P-Channel MOSFET
Subcategory: Dual N/P-Channel

QS8M51TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

QS8M51TR Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

QS8M51TR Features

  • Dual N/P-channel MOSFET configuration.
  • 100V drain-to-source voltage rating.
  • Low on-resistance of 325mOhm.
  • Logic level gate drive supported.
  • Surface mount TSMT8 package.

QS8M51TR Applications

  • Suitable for power switching applications.
  • Ideal for battery powered devices.
  • Used in portable electronic equipment.
  • General purpose switching circuits.

QS8M51TR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the QS8M51TR?

The drain-to-source voltage (Vdss) for the QS8M51TR is 100V.

What is the maximum on-resistance of the QS8M51TR?

The maximum on-resistance (Rds On) is 325mOhm when the drain current is 2A and gate-source voltage is 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range (TJ) for the QS8M51TR is 150°C.

What package type is the QS8M51TR supplied in?

The QS8M51TR is supplied in the TSMT8 package.

Is the QS8M51TR RoHS compliant?

Yes, the QS8M51TR is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the QS8M51TR?

The Moisture Sensitivity Level (MSL) for the QS8M51TR is 1 Unlimited.

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