QS6M4TR The ROHM Semiconductor QS6M4TR is a dual N/P-channel MOSFET with 30V/20V drain-to-source voltage and 1.5A continuous current. It is designed for surface mount applications.
Mfr Part #:

QS6M4TR

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor QS6M4TR is a dual N/P-channel MOSFET with 30V/20V drain-to-source voltage and 1.5A continuous current. It is designed for surface mount applications.
✓ Total Stock: 7,489 pcs
$ Price Range: $1.96

QS6M4TR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,791 pcs
6791 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
698 pcs
698 pcs On Request 1 On Request On Request 1108+ On Request On Request

QS6M4TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

QS6M4TR Description

Short technical summary and product information.

The ROHM Semiconductor QS6M4TR is a dual MOSFET featuring both N-channel and P-channel configurations within a single device. It offers a drain-to-source voltage of 30V for the N-channel and 20V for the P-channel, with a continuous drain current capability of 1.5A. The on-resistance (Rds On) is specified at a maximum of 230mOhm at 1.5A and 4.5V gate-source voltage.

 

This MOSFET utilizes MOSFET technology and is characterized by its logic level gate, allowing for operation with lower gate drive voltages. Key electrical parameters include an input capacitance of 80pF at 10V and a gate charge of 1.6nC at 4.5V. The gate threshold voltage is a maximum of 1.5V at 1mA.

 

Packaged in a compact TSMT6 (SC-95) SOT-23-6 Thin package, the QS6M4TR is suitable for surface mount assembly. It has a power dissipation rating of 1.25W and can operate within a junction temperature range of -55°C to 150°C. This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

QS6M4TR Quick Information

Product Type: MOSFET
Canonical Name: QS6M4TR Dual N-Channel/P-Channel MOSFET
Subcategory: Dual MOSFET

QS6M4TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

QS6M4TR Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

QS6M4TR Features

  • Dual N-channel and P-channel MOSFETs.
  • 30V and 20V drain-to-source voltage.
  • 1.5A continuous drain current.
  • Low Rds On of 230mOhm.
  • Compact TSMT6 surface mount package.

QS6M4TR Applications

  • Ideal for power management circuits.
  • Suitable for battery-powered devices.
  • Used in portable electronic equipment.
  • Applicable for load switching tasks.

QS6M4TR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the QS6M4TR?

The maximum drain-to-source voltage is 30V or 20V depending on configuration.

What is the continuous drain current rating for the QS6M4TR?

The device has a continuous drain current of 1.5A.

What package types are available for the QS6M4TR?

It is available in TSMT6, TSOT-23-6, and SOT-23-6 Thin surface-mount packages.

What is the maximum Rds On for the QS6M4TR?

The maximum Rds On is 230 milliohms at 1.5A and 4.5V gate drive.

What is the maximum gate charge of the QS6M4TR?

The maximum gate charge is 1.6 nanocoulombs at 4.5V.

What is the operating temperature limit for the QS6M4TR?

It supports an operating temperature of up to 150°C.

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