| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
485 pcs
|
485 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Failure Rate | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Technology |
The Rohm Semiconductor QS6M3-TR is a dual N-channel MOSFET suitable for automotive applications, adhering to AEC-Q101 standards. This component offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1A at 25°C. Its on-resistance (Rds On) is a maximum of 238mOhm at 1A and 4.5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 1.5V at 1mA.
Key electrical characteristics include a gate charge (Qg) of 2.4nC at 4.5V and an input capacitance (Ciss) of 77pF at 10V. The MOSFET has a maximum power dissipation of 900mW (Tc) and operates within a temperature range of -150°C to 150°C. It features logic-level gate control and a 2.5V drive capability.
The QS6M3-TR is supplied in a TSMT6 (SC-95) or SOT-23-6 Thin package, designed for surface mounting. It is delivered in tape and reel packaging, suitable for automated assembly processes. This configuration makes it a versatile component for various automotive electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 1A at 25°C.
The maximum on-resistance (Rds On) is 238mOhm at 1A and 4.5V.
The gate threshold voltage (Vgs(th)) is 1.5V at 1mA.
The operating temperature range is -150°C to 150°C.
The QS6M3-TR is supplied in TSMT6 (SC-95) or SOT-23-6 Thin packages.
Yes, the QS6M3-TR is qualified to Automotive AEC-Q101 standards.