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QS6K1TR The ROHM Semiconductor QS6K1TR is a dual N-channel MOSFET designed for surface mount applications. It offers a 30V drain-source voltage and 1A continuous current.
Mfr Part #:

QS6K1TR

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor QS6K1TR is a dual N-channel MOSFET designed for surface mount applications. It offers a 30V drain-source voltage and 1A continuous current.
✓ Total Stock: 5,472 pcs
$ Price Range: $1.96

QS6K1TR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,237 pcs
On Request
3237 pcs On Request 1 On Request On Request 20+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
2,235 pcs
On Request
2235 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

QS6K1TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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QS6K1TR Description

Short technical summary and product information.

The ROHM Semiconductor QS6K1TR is a dual N-channel MOSFET with a surface mount configuration, specifically in a TSMT6 (SC-95) or SOT-23-6 Thin package. This device features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1A. Its on-resistance (Rds On) is specified at a maximum of 238mOhm at 1A and 4.5V gate-source voltage.

 

Key electrical characteristics include a gate charge (Qg) of 2.4nC maximum at 4.5V and a gate threshold voltage (Vgs(th)) of 1.5V maximum at 1mA. The MOSFET is designed with a logic level gate, making it suitable for low-voltage applications. It operates within a temperature range of -55°C to 150°C (TJ) and can dissipate up to 1.25W of power.

 

This MOSFET is ideal for various switching and amplification tasks in electronic circuits where space is a constraint due to its compact package. The dual N-channel configuration allows for flexible circuit design.

QS6K1TR Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor QS6K1TR Dual N-Channel MOSFET
Subcategory: Dual N-Channel

QS6K1TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

QS6K1TR Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

QS6K1TR Features

  • Dual N-channel MOSFET configuration.
  • 30V drain-source voltage rating.
  • 1A continuous drain current.
  • Surface mount TSMT6 package.
  • Logic level gate design.

QS6K1TR Applications

  • Suitable for low-voltage switching.
  • Ideal for space-constrained designs.
  • Used in general purpose amplification.
  • Efficient power management circuits.

QS6K1TR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the QS6K1TR MOSFET?

The maximum drain-source voltage (Vdss) for the QS6K1TR is 30V.

What is the continuous drain current rating of the QS6K1TR?

The QS6K1TR has a continuous drain current rating of 1A.

What is the on-resistance of the QS6K1TR at 1A and 4.5V?

The Rds On is a maximum of 238mOhm at 1A and 4.5V.

What is the maximum operating temperature for the QS6K1TR?

The maximum operating junction temperature (TJ) for the QS6K1TR is 150°C.

What package type is the QS6K1TR MOSFET supplied in?

The QS6K1TR is supplied in a TSMT6 (SC-95) or SOT-23-6 Thin package for surface mounting.

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